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JANSG2N2907AUBC - BJT( BiPolar Junction Transistor)

JANSG2N2907AUBC_8944015.PDF Datasheet


Part No.	JANSG2N2907AUBC JANSM2N2906A JANSM2N2906AL JANSM2N2906AUA JANSM2N2906AUB JANSM2N2906AUBC JANSM2N2907A JANSM2N2907AL JANSM2N2907AUA JANSM2N2907AUB JANSR2N2906AUA JANSR2N2906AUBC JANSR2N2907A JANSR2N2907AUA JANSR2N2907AUB JANSR2N2907AUBC JANSR2N2907AL JANSR2N2906AL JANSD2N2906AUA
Description	BJT( BiPolar Junction Transistor)
File Size	94.46K / 6 Page
Maker	Microsemi
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PART	Description	Maker
30KW258A 30KW168 30KW168A 30KW216 30KW240 30KW240A	258.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 168.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 240.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 120.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 198.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 270.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 144.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 288.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications 102.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications	MDE Semiconductor
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2SD1468S 2SD1834 2SD1834T100W 2SD1468STPR 2SD1468S	1000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR Transistors > Small Signal Bipolar Transistors(up to 0.6W) Transistors > Medium Power Bipolar Transistors(0.5W-1.0W) BJT Low-Power, Single/Dual-Level Battery Monitors with Hysteresis 晶体	ROHM
151-05 151-08 151-07 151-09 152-05 164-18 164-04 1	TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 6A I(C) \| TO-82 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 220V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 140V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 90V V(BR)CEO \| 20A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 200V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 240V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 160V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 10A I(C) \| STR-5/16 TRANSISTOR \| BJT \| NPN \| 240V V(BR)CEO \| 6A I(C) \| TO-82 TRANSISTOR \| BJT \| NPN \| 120V V(BR)CEO \| 7.5A I(C) \| STR-1/4 TRANSISTOR \| BJT \| NPN \| 180V V(BR)CEO \| 6A I(C) \| TO-82 晶体管\|晶体管\|叩\| 100V的五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\|叩\| 180V五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\| npn型\| 140伏特五（巴西）总裁\|甲一c）\| STR-5/16 晶体管\|晶体管\|叩\| 50V五（巴西）总裁\| 6A条一c）\|2 TRANSISTOR \| BJT \| NPN \| 100V V(BR)CEO \| 7.5A I(C) \| STR-1/4 晶体管\|晶体管\|叩\| 100V的五（巴西）总裁\| 7.5AI（丙）\|个STR - 1 / 4 TRANSISTOR \| BJT \| NPN \| 60V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 60V的五（巴西）总裁\|甲一c）\| STR-5/16 TRANSISTOR \| BJT \| NPN \| 50V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 50V五（巴西）总裁\|甲一（c）\| STR-5/16 TRANSISTOR \| BJT \| NPN \| 70V V(BR)CEO \| 20A I(C) \| STR-5/16 晶体管\|晶体管\|叩\| 70V的五（巴西）总裁\|甲一（c）\| STR-5/16	Samsung Semiconductor Co., Ltd. Molex, Inc. Intel, Corp.
2N1493 2N1410 2N335 2N337 2N333 2N2537 2N3510 2N36	5-Pin, Multiple-Input, Programmable Reset ICs TRANSISTOR \| BJT \| NPN \| 25MA I(C) \| TO-5 TRANSISTOR \| BJT \| NPN \| 20MA I(C) \| TO-5 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset TRANSISTOR \| BJT \| NPN \| 10V V(BR)CEO \| 500MA I(C) \| TO-52 TRANSISTOR \| BJT \| PNP \| 60V V(BR)CEO \| 500MA I(C) \| TO-105 TRANSISTOR \| BJT \| NPN \| 40V V(BR)CEO \| 50MA I(C) \| TO-72 TRANSISTOR \| BJT \| NPN \| 80V V(BR)CEO \| 500MA I(C) \| TO-5 TRANSISTOR \| BJT \| NPN \| 20V V(BR)CEO \| 500MA I(C) \| TO-5 TRANSISTOR \| BJT \| PNP \| 6V V(BR)CEO \| 100MA I(C) \| TO-92 TRANSISTOR \| BJT \| NPN \| 7V V(BR)CEO \| 100MA I(C) \| TO-18 TRANSISTOR \| BJT \| NPN \| 35V V(BR)CEO \| 800MA I(C) \| TO-5 5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路 TRANSISTOR \| BJT \| NPN \| 45V V(BR)CEO \| 300MA I(C) \| TO-5	Weidmuller, Corp.
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